AccuStrata’s solution for reducing the cost of LED lighting is by increasing the yield of the epitaxial wafers and reducing the binning cost during manufacturing of the LED devices. As the LED structure is deposited in the MOCVD reactor, the control system detects fluctuations and drifts from the model properties of the deposited films and issues messages to the operator when any of the following properties deviate from the specifications:

  • LED central wavelength and its uniformity
    • Within one single wafer
    • Wafer to wafer in the batch
    • Run-to-run
    • Machine-to-machine
  • Chemical composition of InGaN well layers and their repeatability
  • Short and long-term drifts of the central WL and its uniformity
  • Local effective surface temperature on the wafers during the film growth
  • Film material band-gap, uniformity, homogeneity, time drift

By using AccuStrata’s technology for HB-LED, the customer can increase its total yield by 10-14% or epitaxy yield by 60%.

AccuStrata’s technology saves $0.022 per 1 mm sq. LED chip, which translates to over $450,000 annual saving for one MOCVD epitaxy reactor, or over $22 million annual saving for LED manufacturer with an average of 50 MOCVD reactors.

Click to Enlarge

Click to Enlarge

Click to Enlarge

Click to Enlarge

Click to Enlarge

Click to Enlarge

Click to Enlarge

Click to Enlarge

Return to 'Our Technology'